Neutron Transmutation Doping of Silicon | MIT Nuclear Reactor
The NTD process takes place when undoped (high purity) silicon is irradiated in a thermal neutron flux. The purpose of semiconductor doping is to create free electrons (low resistivity). The thermal neutron is captured by the 30Si atom, which has a 3% abundance in pure Si.
Doping (semiconductor)
Neutron transmutation doping (NTD) is an unusual doping method for special applications. Most commonly, it is used to dope silicon n-type in high-power electronics and semiconductor detectors. It is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption as follows:
Ion Implantation for Semiconductors | Solvay
Doping with ion implantation is an essential step in the semiconductor fabrication process. Through this method, atoms are intentionally introduced to silicon wafers with impurities that allow conduction. High-quality equipment is required, enhanced with raw materials.
Semiconductor Materials - IEEE IRDS
Semiconductors like pure silicon have few free electrons and act more like insulators. Silicon behavior can be nudged toward conductivity through a process called doping. Doping mixes tiny impurities into the semiconductor materials. The impurities add “donor atoms” to the base material, encouraging conductivity.
Semiconductor Doping - an overview | ScienceDirect Topics
A high-purity Ge ingot is usually p-type at the seed end and n-type at the tail with a p–n junction in between [32]. Doping elements of the appropriate type can also be added during the pulling, so that a p–n junction can be realized during Ge crystal growth [33, 34].
- What is a doped semiconductor?
- In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.
- How does doping affect a semiconductor?
- Doping a semiconductor in a good crystal introduces allowed energy states within the band gap, but very close to the energy band that corresponds to the dopant type. In other words, electron donor impurities create states near the conduction band while electron acceptor impurities create states near the valence band.
- Is no doping a promising technique for advancing p-type 2D transistors?
- Our findings establish NO doping as a promising technique for realizing high-performance p-type 2D transistors and advancing next-generation ultra-scaled electronic devices. 2D semiconductors are promising candidates for next-generation electronics, but the realization of competitive 2D p-type transistors remains challenging.
- Why is doping elusive for strongly confined semiconductor nanocrystals?
- However, doping has proven elusive for strongly confined colloidal semiconductor nanocrystals because of the synthetic challenge of how to introduce single impurities, as well as a lack of fundamental understanding of this heavily doped limit under strong quantum confinement.
- Can N- and P-type doped semiconductor NCS be controlled by metal impurities?
- Doping semiconductor NCs with metal impurities provides further means to control their optical and electronic properties. We developed a synthesis for n- and p-type doped InAs NCs by introducing Cu and Ag impurities, respectively. Cu-doped particles showed a blue shift in the absorption with only small bleaching.
- What is doping of bulk semiconductors?
- Doping of bulk semiconductors, the process of intentional insertion of impurity atoms into a crystal, was introduced in the 1940s and is the basis for the widespread application of semiconductors in electronic and electro-optic components (1).
