Doping on demand in 2D devices | Nature Electronics
Fig. 1: An electron-beam-induced doping technique for 2D devices. a, Schematic for direct writing of doping patterns in graphene devices. A selected doping level is achieved by a combination of
Doping of Soft Semiconductors | ACS Energy Letters
In organic semiconductors, electronic doping is considered a way to surgically control the electronic properties of organic devices such as light-emitting diodes, photodetectors, thermoelectrics, solar cells, field-effect transistors, and lasers. It is already implemented, with small molecules, in commercially available OLED displays.
HOMO–HOMO Electron Transfer: An Elegant Strategy for p‐Type Doping
The doped polymer films exhibit high thermal and ambient stability resulting in a maximum power factor of 0.07 W m 1 K 2 at a Seebeck coefficient of 140 V K 1 for a very low doping ratio of 4 mol%. Also, the concept of HOMO OSC-1 to HOMO OSC-2 electron transfer is a highly efficient, stable and generic way to p-dope other
Effect of Li, K and Be doping on phase stability, band structure and
There is an increase in bandgap of pure STO with Li and K doping from 1.792 eV to 1.897 eV and to 1.888 eV, respectively. But in case of Be doping its value decreases to 1.620 eV. For pure and doped STO, the bandgap nature remains unchanged i.e. indirect bandgap. Several optical parameters are observed to be affected by the doping.
High thermal stability of doped oxide semiconductor
The amorphous oxide semiconductor InGaZnO (a-IGZO) has attracted much attention due to the wide band gap, the high carrier mobility, and low-temperature process for its thin film fabrication. Although the oxide semiconductor is popularly utilized as a thin-film transistor in display technology, its characteristics are also suitable for application to back-end-of-line (BEOL) transistors in a
- How does CYTOP layer affect the performance of doped semiconductor films?
- Our findings indicate that the Cytop layer significantly impedes oxygen and water erosion, enhances the electrical stability of the films, and potentially repairs microstructural damage caused by doping, thereby contributing valuable insights into the long-term performance and reliability of doped semiconductor films.
- What is the role of doping in semiconducting polymers?
- Volume 31, article number 298, (2024) Doping is a critical method for enhancing the electrical properties of semiconducting polymers, with ongoing innovations in dopant molecules and doping techniques.
- How does anion F doping affect oxide semiconductors?
- By optimizing F amount, both high thermal stability and high on-current can be achieved simultaneously. The impacts of anion F doping on oxide semiconductor are in contrast to cation metal doping (Figure 5).
- Does post-doping improve the internal structure of a semiconductor polymer?
- This reduction suggests an improvement in the internal structure of the semiconductor polymer post-doping.
- Does fluorine doping to a-IGZO improve thermal stability?
- Recently, it was reported that fluorine doping to a-IGZO improves its thermal stability (i.e., suppresses oxygen vacancy [VO] formation) against forming gas (N2/H2) annealing required for BEOL transistors. This article elucidates an atomistic impact of the F doping to a-IGZO by means of first-principles calculations.
- Does doping metal cations improve stability and performance of ZnO TFTs?
- Recent several studies have shown that doping metal cations have enhanced stability and performances of ZnO TFTs, such as Ti-doped ZnO, Hf-doped ZnO, Mg-doped ZnO, Al-doped ZnO, and Zr-doped ZnO , , , , .
