A two-dimensional Fe-doped SnS 2 magnetic semiconductor - Nature

                                               
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Doping (semiconductor)

                                               
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Doping: n- and p-semiconductors - Fundamentals - Halbleiter

                                               
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Semiconductor Materials - IEEE IRDS

                                               
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Doping and semiconductor characterizations - ScienceDirect

                                               
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  • What is doping in semiconductors?
  • Doping in semiconductors finds diverse applications across electronic devices and integrated circuits, including transistors, diodes, solar cells, light-emitting diodes (LEDs), computer chips, and sensors, each benefiting from tailored semiconductor properties enabled by specific doping techniques.
  • What is a doped semiconductor?
  • In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.
  • Can two-dimensional semiconductor substitutional doping be used for thin films?
  • In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe 2 thin films with specific p -type or n -type doping.
  • Which elements are used for doping in semiconductors?
  • The most commonly used doping elements in semiconductors are boron, phosphorus, and arsenic. Boron is used for p-type doping, while phosphorus and arsenic are used for n-type doping. These elements have one less or one extra electron in their outermost shell, making them suitable for creating p-type and n-type semiconductors, respectively.
  • What is diamond doping?
  • Precisely doped diamond semiconductors definitely lead to the creation of diamond-based electronic devices with performance characteristics that dramatically exceed those of conventional semiconductors such as Si or GaAs . In general, impurity doping for such small amounts of dopants is performed by thermal diffusion and ion implantation.
  • What is degenerate doping in silicon field-effect transistors (FETs)?
  • This article has been updated In silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering.