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Site-specific chemical doping reveals electron atmospheres at

                                               
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Special Issue "Innovative Methods for Semiconductor Doping"

                                               
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  • What is a doped semiconductor?
  • In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.
  • How does doping affect a semiconductor?
  • Doping a semiconductor in a good crystal introduces allowed energy states within the band gap, but very close to the energy band that corresponds to the dopant type. In other words, electron donor impurities create states near the conduction band while electron acceptor impurities create states near the valence band.
  • What is doping of bulk semiconductors?
  • Doping of bulk semiconductors, the process of intentional insertion of impurity atoms into a crystal, was introduced in the 1940s and is the basis for the widespread application of semiconductors in electronic and electro-optic components (1).
  • What is diamond doping?
  • Precisely doped diamond semiconductors definitely lead to the creation of diamond-based electronic devices with performance characteristics that dramatically exceed those of conventional semiconductors such as Si or GaAs . In general, impurity doping for such small amounts of dopants is performed by thermal diffusion and ion implantation.
  • Why is doping elusive for strongly confined semiconductor nanocrystals?
  • However, doping has proven elusive for strongly confined colloidal semiconductor nanocrystals because of the synthetic challenge of how to introduce single impurities, as well as a lack of fundamental understanding of this heavily doped limit under strong quantum confinement.
  • Why is n-type doping limited in semiconductors?
  • For example, n-type doping in semiconductors is usually limited by the formation of the compensating cation vacancy when the Fermi energy increases . This also suggests that the dopability of a material depends on the ease of forming compensating intrinsic defects.