Lateral MoS2 p-n junction formed by chemical doping for use in high
The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of 7000%, specific detectivity of 5 × 10 (10) Jones, and light switching ratio of 10 (3)) and ideal rectifying behavior.
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High
The fabricated lateral MoS2p–n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of 7000%, specific detectivity of 5 × 1010Jones, and light switching ratio of 103) and ideal rectifying behavior.
Lateral MoS2 p-n Junction Formed by Chemical Doping for Use
The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency (EQE) of ~ 7000 %,...
Lateral multilayer/monolayer MoS2 heterojunction for high performance
Lateral MoS 2 p-n junction formed by chemical doping for use in high-performance optoelectronics. ACS nano 8 , 9332 (2014). Article CAS PubMed Google Scholar
Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral
In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor...
- How efficient is a lateral Mos 2 p n junction?
- The fabricated lateral MoS 2 p–n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10 10 Jones, and light switching ratio of ∼10 3) and ideal rectifying behavior.
- How are lateral monolayer MOS homojunctions prepared?
- In this article, the lateral monolayer MoS homojunctions were prepared by a nitrogen plasma selective doping technique. The monolayer MoS thin films were synthesized by chemical vapor deposition and characterized by photoluminescence, atom force microscope and Raman spectroscopy.
- What is a controllable plasma doping technique?
- A controllable plasma doping technique, compatible with traditional CMOS process, is utilized to realize the monolayer MoS based pn and npn homojunctions, and it propels the potential applications of 2D materials in the electronic, optoelectronic devices and circuits. ].
- What are atomic force microscopic images for a MoS2?
- Atomic force microscopic images (scale bars are 3 µm) for a MoS2(a) before and (b) after 20 mM AuCl3doping. The formation of Au nano-aggregates comprises the surface charge transfer between AuCl4 -ions and MoS 2. 3 2. Electrodes and chemical doping effects for MoS2transistor
- Does monolayer MOs have a PN homojunction?
- Especially, monolayer MoS has a direct band gap of 1.8 eV, which has attracted it much attention in the field of electronic and optoelectronic devices, such as solar cells [ ], photodetectors and light-emitting devices [ film makes a part of it change from n-type to p-type, obtaining a pn homojunction. (b) was its 3D schematic illustration.
- Can lateral junctions be used in optoelectronic devices?
- In this work, we report a lateral MoS -type, and thus form a lateral junction without transfer demonstrate the potential for use in various optoelectronic devices. junctions have been intensively highlighted [ ]. Thus, the lateral ], leading to a more efficient photo-response.
